Skip to main content

Research Repository

See what's under the surface

Advanced Search

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Vuong, T.Q.P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C.J.; Cho, Y.; Cheng, T.S.; Albar, J.D.; Eaves, Laurence; Foxon, C.T.; Beton, Peter H.; Novikov, Sergei V.; Gil, B.

Authors

T.Q.P. Vuong

G. Cassabois

P. Valvin

E. Rousseau

A. Summerfield

C.J. Mellor

Y. Cho

T.S. Cheng

J.D. Albar

Laurence Eaves

C.T. Foxon

Peter H. Beton

Sergei V. Novikov

B. Gil



Journal Article Type Article
Publication Date Mar 17, 2017
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 4
Issue 2
Article Number 021023
APA6 Citation Vuong, T., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C., …Gil, B. (2017). Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4(2), https://doi.org/10.1088/2053-1583/aa604a
DOI https://doi.org/10.1088/2053-1583/aa604a
Keywords boron nitride, molecular beam epitaxy, deep ultraviolet
Publisher URL http://iopscience.iop.org/article/10.1088/2053-1583/aa604a/meta;jsessionid=6F6C9A708463CD7291EC35FABB54FA9E.c2.iopscience.cld.iop.org
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

Files

2DMater_4_2017_021023.pdf (1.9 Mb)
PDF

Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





You might also like



Downloadable Citations

;