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Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Vuong, T.Q.P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C.J.; Cho, Y.; Cheng, T.S.; Albar, J.D.; Eaves, Laurence; Foxon, C.T.; Beton, Peter H.; Novikov, Sergei V.; Gil, B.

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy Thumbnail


Authors

T.Q.P. Vuong

G. Cassabois

P. Valvin

E. Rousseau

A. Summerfield

Y. Cho

J.D. Albar

Laurence Eaves

C.T. Foxon

Peter H. Beton

B. Gil



Citation

Vuong, T., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C., Cho, Y., Cheng, T., Albar, J., Eaves, L., Foxon, C., Beton, P. H., Novikov, S. V., & Gil, B. (2017). Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4(2), Article 021023. https://doi.org/10.1088/2053-1583/aa604a

Journal Article Type Article
Acceptance Date Feb 10, 2017
Online Publication Date Mar 17, 2017
Publication Date Mar 17, 2017
Deposit Date Apr 7, 2017
Publicly Available Date Apr 7, 2017
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 4
Issue 2
Article Number 021023
DOI https://doi.org/10.1088/2053-1583/aa604a
Keywords boron nitride, molecular beam epitaxy, deep ultraviolet
Public URL https://nottingham-repository.worktribe.com/output/850832
Publisher URL http://iopscience.iop.org/article/10.1088/2053-1583/aa604a/meta;jsessionid=6F6C9A708463CD7291EC35FABB54FA9E.c2.iopscience.cld.iop.org
Contract Date Apr 7, 2017

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