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Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Vuong, T.Q.P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C.J.; Cho, Y.; Cheng, T.S.; Albar, J.D.; Eaves, Laurence; Foxon, C.T.; Beton, Peter H.; Novikov, Sergei V.; Gil, B.

Authors

T.Q.P. Vuong

G. Cassabois

P. Valvin

E. Rousseau

A. Summerfield

Y. Cho

J.D. Albar

C.T. Foxon

B. Gil



Citation

Vuong, T., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C., …Gil, B. (2017). Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4(2), Article 021023. https://doi.org/10.1088/2053-1583/aa604a

Journal Article Type Article
Acceptance Date Feb 10, 2017
Online Publication Date Mar 17, 2017
Publication Date Mar 17, 2017
Deposit Date Apr 7, 2017
Publicly Available Date Apr 7, 2017
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 4
Issue 2
Article Number 021023
DOI https://doi.org/10.1088/2053-1583/aa604a
Keywords boron nitride, molecular beam epitaxy, deep ultraviolet
Public URL https://nottingham-repository.worktribe.com/output/850832
Publisher URL http://iopscience.iop.org/article/10.1088/2053-1583/aa604a/meta;jsessionid=6F6C9A708463CD7291EC35FABB54FA9E.c2.iopscience.cld.iop.org

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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