SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
Novikov, Sergei V.; Foxon, C.T.
Authors
C.T. Foxon
Abstract
Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron nitride (PBN) cavity of the RF plasma source. In this paper we discuss the unintentional B incorporation for PA-MBE growth of GaN and AlxGa1−xN using a highly efficient RF plasma source. We have studied a wide range of MBE growth conditions for GaN and AlxGa1−xN with growth rates from 0.2 to 3 µm/h, RF powers from 200 to 500 W, different nitrogen flow rates from 1 to 25 sccm and growth times up to several days. The chemical concentrations of B and matrix elements of Al, Ga, N were studied as a functions of depth using secondary ion mass spectrometry (SIMS). We demonstrate that boron incorporation with this highly efficient RF plasma source is approximately 1×1018 to 3×1018 cm−3 for the AlxGa1−xN growth rates of 2 – 3 µm/h.
Citation
Novikov, S. V., & Foxon, C. (2017). Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477, 154-158. https://doi.org/10.1016/j.jcrysgro.2017.01.007
Journal Article Type | Article |
---|---|
Acceptance Date | Jan 4, 2017 |
Online Publication Date | Jan 5, 2017 |
Publication Date | Nov 1, 2017 |
Deposit Date | Jan 17, 2017 |
Publicly Available Date | Jan 17, 2017 |
Journal | Journal of Crystal Growth |
Print ISSN | 0022-0248 |
Electronic ISSN | 0022-0248 |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 477 |
Pages | 154-158 |
DOI | https://doi.org/10.1016/j.jcrysgro.2017.01.007 |
Keywords | A3. Molecular beam epitaxy; B1. Nitrides; A1. Doping; B2. Semiconducting III–V materials |
Public URL | https://nottingham-repository.worktribe.com/output/892307 |
Publisher URL | http://www.sciencedirect.com/science/article/pii/S0022024817300052 |
Additional Information | Conference proceedings. |
Files
CRYS23975_paper_060217.pdf
(654 Kb)
PDF
Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
You might also like
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
(2022)
Journal Article
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
(2022)
Journal Article
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
(2021)
Journal Article
Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures
(2021)
Journal Article
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: discovery-access-systems@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2024
Advanced Search