Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs
Presentation / Conference Contribution
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., Mawby, P., & Lophitis, N. (2022, October). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs. Presented at 2022 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA
Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.