A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters
(2021)
Journal Article
In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.