All Outputs (7)

Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect (2023)
Journal Article
Hu, Y., Weir, M. P., Pereira, H. J., Amin, O. J., Pitcairn, J., Cliffe, M. J., …Woodward, S. (2023). Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect. Applied Physics Letters, 123(22), Article 223902. https://doi.org/10.1063/5.0157778

In this work, we present a method to enhance the longitudinal spin Seebeck effect at platinum/yttrium iron garnet (Pt/YIG) interfaces. The introduction of a partial interlayer of bismuth selenide (Bi2Se3, 2.5% surface coverage) interfaces significant... Read More about Bi2Se3 interlayer treatments affecting the Y3Fe5O12 (YIG) platinum spin Seebeck effect.

Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties (2023)
Journal Article
Duan, Z., Phillips, J., Liirò-Peluso, L., Woodward, S., Makarovsky, O., Weir, M. P., …Amabilino, D. B. (2023). Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties. Materials Advances, 22(4), Article 5573. https://doi.org/10.1039/d3ma00547j

The preparation and properties of conducting polymers comprising poly(3,4-ethylenedioxythiophene) (PEDOT) and two types of carrageenan – each on their own or combined – as counter-ions are described. The aim of the work is to provide alternative, mor... Read More about Conducting poly(3,4-ethylenedioxythiophene) materials with sustainable carrageenan counter-ions and their thermoelectric properties.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

A Soluble ‘Ba(Ni-ett)’ (ett = 1,1,2,2-Ethenetetrathiolate) Derived Thermoelectric Material (2023)
Journal Article
Hu, Y., Rivers, G., Weir, M. P., Amabilino, D. B., Tuck, C. J., Wildman, R. D., …Woodward, S. (2023). A Soluble ‘Ba(Ni-ett)’ (ett = 1,1,2,2-Ethenetetrathiolate) Derived Thermoelectric Material. Electronic Materials Letters, https://doi.org/10.1007/s13391-023-00454-z

We describe the synthesis and characterisation of the first of a new class of soluble ladder oligomeric thermoelectric material based on previously unutilised ethene-1,1,2,2-tetrasulfonic acid. Reaction of Ba(OH)2 and propionic acid at a 1:1 stoichio... Read More about A Soluble ‘Ba(Ni-ett)’ (ett = 1,1,2,2-Ethenetetrathiolate) Derived Thermoelectric Material.

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
Journal Article
Dey, A., Cottam, N., Makarovskiy, O., Yan, W., Mišeikis, V., Coletti, C., …Patanè, A. (2023). Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure. Communications Physics, 6, Article 216. https://doi.org/10.1038/s42005-023-01340-8

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions (2023)
Journal Article
Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Morozov, S. V., Makarovsky, O., Patanè, A., …Eaves, L. (2023). A magnetically-induced Coulomb gap in graphene due to electron-electron interactions. Communications Physics, 6, Article 159. https://doi.org/10.1038/s42005-023-01277-y

Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity... Read More about A magnetically-induced Coulomb gap in graphene due to electron-electron interactions.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.