A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs
(2017)
Journal Article
Fayyaz, A., Romano, G., Urresti, J., Riccio, M., Castellazzi, A., Irace, A., & Wright, N. (2017). A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10(4), Article 452. https://doi.org/10.3390/en10040452
This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying... Read More about A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs.