Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement
(2024)
Journal Article
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Undrea, F., …Lophitis, N. (2024). Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement. IEEE Transactions on Industry Applications, https://doi.org/10.1109/tia.2024.3354870
In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon counterparts in power conversion applications due to their performance superiority. SiC insulated-gate bipolar transistors are particularly interesting as t... Read More about Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement.