Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances
(2023)
Conference Proceeding
Almpanis, I., Evans, P., Li, K., & Lophitis, N. (2023). Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances. In 2023 IEEE Design Methodologies Conference (DMC). https://doi.org/10.1109/dmc58182.2023.10412584
This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.