Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design

Zhang, Lu Yang; Dai, Tian Xiang; Gammon, Peter M.; Lophitis, Neophytos; Udrea, Florin; Tiwari, Amit; Gonzalez, Jose Ortiz; Renz, A. Benjamin; Shah, Vish Al; Mawby, Phillip A.; Antoniou, Marina

doi:10.4028/p-13z22g

All Outputs (3)

Are we on the brink of a post-silicon era in aircraft power electronics? (2022)
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Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs (2022)
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This work presents the design methodology and performance of a compact edge termination structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings (FFRs) for such high voltage rating SiC devices are not favored because... Read More about Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs.

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design (2022)
Journal Article

The commercial success of silicon carbide (SiC) diodes and MOSFETs for the automotive industry has led many in the field to begin developing ultra-high voltage (UHV) SiC insulated gate bipolar transistors (IGBTs), rated from 6 kV to 30 kV, for future... Read More about Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design.