3C-SiC-on-Si MOSFETs: overcoming material technology limitations
(2021)
Journal Article
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2021). 3C-SiC-on-Si MOSFETs: overcoming material technology limitations. IEEE Transactions on Industry Applications, https://doi.org/10.1109/TIA.2021.3119269
The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxi... Read More about 3C-SiC-on-Si MOSFETs: overcoming material technology limitations.