All Outputs (3)

3C-SiC-on-Si MOSFETs: overcoming material technology limitations (2021)
Journal Article

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxi... Read More about 3C-SiC-on-Si MOSFETs: overcoming material technology limitations.

Holistic Approach To Understanding Battery Degradation (2021)
Journal Article

Li-ion cell degradation has a strong impact on electric vehicle performance both directly, through performance reduction, and indirectly through deviating behavior away from initial control system calibration. This necessitates a process for evaluati... Read More about Holistic Approach To Understanding Battery Degradation.

Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes (2021)
Journal Article

The ability of cubic phase (3C-) Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective Wide Bandgap devices and homogeneous integration with Si devices. In this paper, the... Read More about Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes.