All Outputs (2)

Validated physical models and parameters of bulk 3C-SiC aiming for credible technology computer aided design (TCAD) simulation (2017)
Journal Article

© 2017 IOP Publishing Ltd. The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon (Si) wafers which makes it of special int... Read More about Validated physical models and parameters of bulk 3C-SiC aiming for credible technology computer aided design (TCAD) simulation.

On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept (2017)
Journal Article

© 2017 IEEE. In this letter, we present the "anode-side" SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward th... Read More about On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept.