Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique
(2016)
Journal Article
Al Saqri, N. A., Felix, J. F., Aziz, M., Kunets, V. P., Jameel, D. A., Taylor, D., …Salamo, G. (in press). Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique. Nanotechnology, 28(4), https://doi.org/10.1088/1361-6528/28/4/045707
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–volta... Read More about Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique.