All Outputs (6)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Conference Proceeding

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network (2016)
Conference Proceeding

This paper presents a novel resonant based, high power density power electronics converter solution for mid-feeder voltage regulation of a low voltage (LV) distribution network. Owing to the use of high switching frequency operation and a full soft-s... Read More about A novel full soft-switching resonant power converter for mid-feeder voltage regulation of low voltage distribution network.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Conference Proceeding

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Conference Proceeding

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Conference Proceeding

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.

Low inductance 2.5kV packaging technology for SiC switches (2016)
Conference Proceeding

The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure wh... Read More about Low inductance 2.5kV packaging technology for SiC switches.