All Outputs (22)

Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (in press). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics,

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage (Vth) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the im... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.

A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle (2023)
Journal Article
Li, K., & Sen, S. (2024). A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle. IEEE Transactions on Vehicular Technology, 73(4), 4541-4553. https://doi.org/10.1109/tvt.2023.3340297

In order to overcome the challenge of balancing accuracy with simulation speed of power electronics converters for system-level simulation, the paper proposes a GaN power transistor model that can accurately and rapidly predict power losses, which is... Read More about A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle.

1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application (2023)
Conference Proceeding
De Giorgio, M., Li, K., Marchant, S., de Lillo, L., Empringham, L., Serafianos, D., …Johnson, M. (2023). 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application. In 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP). https://doi.org/10.1109/spec56436.2023.10408710

In this paper, a 1.2 kV wirebond-less Silicon Carbide (SiC) Intelligent Power Module (IPM) designed for automotive applications is presented. This IPM includes integrated decoupling capacitors and gate drivers. By utilizing Printed Circuit Board (PCB... Read More about 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application.

IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle (2023)
Conference Proceeding
Li, K., & Vo-Duy, T. (2023). IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle. In 2023 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/vppc60535.2023.10403256

Motor Vehicle Challenge, supported by IEEE Vehicular Technology Society, is an annual activity to find an appropriate energy management strategy to improve electric vehicles’ performance. In Challenge 2024, power losses and efficiency of power conver... Read More about IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle.

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances (2023)
Conference Proceeding
Almpanis, I., Evans, P., Li, K., & Lophitis, N. (2023). Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances. In 2023 IEEE Design Methodologies Conference (DMC). https://doi.org/10.1109/dmc58182.2023.10412584

This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.

Deep Contrastive Representation Learning With Self-Distillation (2023)
Journal Article
Xiao, Z., Xing, H., Zhao, B., Qu, R., Luo, S., Dai, P., …Zhu, Z. (2024). Deep Contrastive Representation Learning With Self-Distillation. IEEE Transactions on Emerging Topics in Computational Intelligence, 8(1), 3-15. https://doi.org/10.1109/tetci.2023.3304948

Recently, contrastive learning (CL) is a promising way of learning discriminative representations from time series data. In the representation hierarchy, semantic information extracted from lower levels is the basis of that captured from higher level... Read More about Deep Contrastive Representation Learning With Self-Distillation.

N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems (2023)
Conference Proceeding
Eckstein, M., & Li, K. (2023). N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems. In 2022 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/VPPC55846.2022.10003315

Accurate and fast power loss estimation models based on a good understanding of the occuring loss mechanisms are crucial to achieve high efficiency, high power density and to take full advantage of the superior characteristics of Gallium Nitride (GaN... Read More about N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems.

An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients (2022)
Conference Proceeding
Radu, C., Li, K., Igic, P., Shepherd, S., Wörndle, A., van der Broeck, C. H., & Faramehr, S. (2022). An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (1-6). https://doi.org/10.1109/WiPDAEurope55971.2022.9936259

Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)
Conference Proceeding
Lu, X., Videt, A., Li, K., Idir, N., & al., E. (2022). Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and witho... Read More about Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles (2022)
Book
Ta, M. C., Li, K., & Bouscayrol, A. (Eds.). (2022). Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles. Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/tvt.2022.3180124

The papers in this special section focus on innovative electrified vehicles. According to the “Global EV Outlook 2021” of International Energy Agency (IEA), ten million electric cars were on the world’s roads in 2020. It was an important year for the... Read More about Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles.

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends (2021)
Journal Article
Van Do, T., Trovao, J. P. F., Li, K., & Boulon, L. (2021). Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends. IEEE Vehicular Technology Magazine, 16(4), 89-98. https://doi.org/10.1109/MVT.2021.3112943

In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power semico... Read More about Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

A Study of the Truncated Square Pyramid Geometry for Enhancement of Super-hydrophobicity (2020)
Journal Article
(2020). A Study of the Truncated Square Pyramid Geometry for Enhancement of Super-hydrophobicity. Journal of Bionic Engineering, 17, Article 843-850. https://doi.org/10.1007/s42235-020-0070-z

Super-hydrophobic surfaces are quite common in nature, inspiring people to continually explore its water-repellence property and applications to our lives. It has been generally agreed that the property of super-hydrophobicity is mainly contributed b... Read More about A Study of the Truncated Square Pyramid Geometry for Enhancement of Super-hydrophobicity.

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Conference Proceeding
DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., …Burgos, R. (2018). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors (2018)
Journal Article
O Brien, J., Yang, L., Li, K., Dai, J., Corfield, M., Harris, A., …Johnson, C. M. (2018). Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors. IEEE Transactions on Power Electronics, 33(12), 10594-10601. https://doi.org/10.1109/TPEL.2018.2809923

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MO... Read More about Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors.

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics, 33(6), 5262 - 5273. https://doi.org/10.1109/TPEL.2017.2730260

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (in press). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, https://doi.org/10.1049/iet-est.2017.0022

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (in press). Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (2016). SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (2016). SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.