All Outputs (2)

An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients (2022)
Conference Proceeding
Radu, C., Li, K., Igic, P., Shepherd, S., Wörndle, A., van der Broeck, C. H., & Faramehr, S. (2022). An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (1-6). https://doi.org/10.1109/WiPDAEurope55971.2022.9936259

Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)
Conference Proceeding
Lu, X., Videt, A., Li, K., Idir, N., & al., E. (2022). Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and witho... Read More about Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.