An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients
(2022)
Conference Proceeding
Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.