All Outputs (2)

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy (2023)
Journal Article
Bradford, J., Cheng, T. S., James, T. S., Khlobystov, A. N., Mellor, C. J., Watanabe, K., …Beton, P. H. (2023). Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy. 2D Materials, 10(3), Article 035035. https://doi.org/10.1088/2053-1583/acdefc

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the... Read More about Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy.

Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode (2023)
Journal Article
James, T., Bradford, J., Kerfoot, J., Korolkov, V. V., Alkhamisi, M., Taniguchi, T., …Beton, P. H. (2023). Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode. Molecular Physics, 121(7-8), Article e2197081. https://doi.org/10.1080/00268976.2023.2197081

Monolayers of free base phthalocyanine (H2Pc) are grown on monolayer and few-layer exfoliated flakes of hexagonal boron nitride (hBN) which are subsequently integrated into a van der Waals tunnel diode. This heterostructure consists of two thin hBN f... Read More about Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode.