TEM assessment of As-doped GaN epitaxial layers grown on sapphire
(2004)
Book Chapter
TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy su... Read More about TEM assessment of As-doped GaN epitaxial layers grown on sapphire.