All Outputs (4)

Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films (2022)
Journal Article
Jaafar, A. H., Meng, L., Zhang, T., Guo, D., Newbrook, D., Zhang, W., …Huang, R. (2022). Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films. ACS Applied Nano Materials, 5(12), 17711-17720. https://doi.org/10.1021/acsanm.2c03639

We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe c... Read More about Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films.

3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing (2022)
Journal Article
Jaafar, A. H., Shao, L., Dai, P., Zhang, T., Han, Y., Beanland, R., …Huang, R. (2022). 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. Nanoscale, 14(46), 17170-17181. https://doi.org/10.1039/d2nr05012a

Memristors are emerging as promising candidates for practical application in reservoir computing systems that are capable of temporal information processing. Here, we experimentally implement a physical reservoir computing system using resistive memr... Read More about 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing.

Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices (2022)
Journal Article
Wallace, A. G., King, R. P., Zhelev, N., Jaafar, A. H., Levason, W., Huang, R., …Bartlett, P. N. (2022). Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices. Electrochimica Acta, 432, Article 141162. https://doi.org/10.1016/j.electacta.2022.141162

In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the depos... Read More about Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices.

Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms (2022)
Book Chapter
Gee, A., Jaafar, A. H., & Kemp, N. T. (2022). Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms. In L. O. Chua, R. Tetzlaff, & A. Slavova (Eds.), Memristor Computing Systems (219-244). Springer International Publishing. https://doi.org/10.1007/978-3-030-90582-8_10

Memristors are known for their low-power non-volatile memory operation, high scalability and simple two-terminal geometry. Their ability to emulate the analogue switching and learning properties of biological synapses has also emerged as a significan... Read More about Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms.