A. G. Wallace
Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices
Wallace, A. G.; King, R. P.; Zhelev, N.; Jaafar, A. H.; Levason, W.; Huang, R.; Reid, G.; Bartlett, P. N.
Authors
R. P. King
N. Zhelev
Dr AYOUB H. JAAFAR HAMDIYAH Ayoub.Hamdiyah@nottingham.ac.uk
Research Fellow
W. Levason
R. Huang
G. Reid
P. N. Bartlett
Abstract
In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the deposited Sb2S3 film. We show that an amorphous Sb2S3 film can be deposited by anodic electrodeposition onto glassy carbon and that the by-product that accompanies this deposition can be avoided by using a suitable pulse plating approach. Raman spectroscopy and grazing incidence X-ray diffraction were used to characterise the deposits and to show that good quality crystalline films of Sb2S3 are produced on annealing. The crystalline Sb2S3 films were screened for application in Resistive Random-Access Memory, and it was demonstrated that crystalline Sb2S3 films display typical bipolar resistive switching behaviour, and that the resistance ratio between the high resistance state and the low resistance state is approximately one order of magnitude at 1.5 V, which is sufficient for memory applications. A mechanism for the resistive switching is also proposed.
Citation
Wallace, A. G., King, R. P., Zhelev, N., Jaafar, A. H., Levason, W., Huang, R., …Bartlett, P. N. (2022). Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices. Electrochimica Acta, 432, Article 141162. https://doi.org/10.1016/j.electacta.2022.141162
Journal Article Type | Article |
---|---|
Acceptance Date | Sep 7, 2022 |
Online Publication Date | Sep 18, 2022 |
Publication Date | Nov 10, 2022 |
Deposit Date | Oct 3, 2022 |
Publicly Available Date | Oct 5, 2022 |
Journal | Electrochimica Acta |
Print ISSN | 0013-4686 |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 432 |
Article Number | 141162 |
DOI | https://doi.org/10.1016/j.electacta.2022.141162 |
Keywords | Electrochemistry; General Chemical Engineering |
Public URL | https://nottingham-repository.worktribe.com/output/11200860 |
Publisher URL | https://www.sciencedirect.com/science/article/pii/S0013468622013196?via%3Dihub |
Files
Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices
(2.7 Mb)
PDF
Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
You might also like
Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms
(2022)
Book Chapter
Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays
(2021)
Journal Article
Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films
(2022)
Journal Article
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: discovery-access-systems@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2024
Advanced Search