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Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices (2022)
Journal Article

In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the depos... Read More about Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices.