Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays
(2021)
Journal Article
In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching ch... Read More about Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays.