Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

Jaafar, Ayoub H.; Meng, Lingcong; Noori, Yasir J.; Zhang, Wenjian; Han, Yisong; Beanland, Richard; Smith, David C.; Reid, Gillian; de Groot, Kees; Huang, Ruomeng; Bartlett, Philip N.

Abstract

In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory.

Citation

Jaafar, A. H., Meng, L., Noori, Y. J., Zhang, W., Han, Y., Beanland, R., …Bartlett, P. N. (2021). Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays. Journal of Physical Chemistry C, 125(47), 26247-26255. https://doi.org/10.1021/acs.jpcc.1c08549

• Journal Article Type: Article
• Acceptance Date: Nov 12, 2021
• Online Publication Date: Nov 19, 2021
• Publication Date: Dec 2, 2021
• Deposit Date: Jul 22, 2022
• Journal: Journal of Physical Chemistry C
• Print ISSN: 1932-7447
• Electronic ISSN: 1932-7455
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 125
• Issue: 47
• Pages: 26247-26255
• DOI: https://doi.org/10.1021/acs.jpcc.1c08549
• Keywords: Surfaces, Coatings and Films; Physical and Theoretical Chemistry; General Energy; Electronic, Optical and Magnetic Materials
• Public URL: https://nottingham-repository.worktribe.com/output/8955581
• Publisher URL: https://pubs.acs.org/doi/10.1021/acs.jpcc.1c08549