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Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

Jaafar, Ayoub H.; Meng, Lingcong; Noori, Yasir J.; Zhang, Wenjian; Han, Yisong; Beanland, Richard; Smith, David C.; Reid, Gillian; de Groot, Kees; Huang, Ruomeng; Bartlett, Philip N.


Lingcong Meng

Yasir J. Noori

Wenjian Zhang

Yisong Han

Richard Beanland

David C. Smith

Gillian Reid

Kees de Groot

Ruomeng Huang

Philip N. Bartlett


In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory.


Jaafar, A. H., Meng, L., Noori, Y. J., Zhang, W., Han, Y., Beanland, R., …Bartlett, P. N. (2021). Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays. Journal of Physical Chemistry C, 125(47), 26247-26255.

Journal Article Type Article
Acceptance Date Nov 12, 2021
Online Publication Date Nov 19, 2021
Publication Date Dec 2, 2021
Deposit Date Jul 22, 2022
Journal Journal of Physical Chemistry C
Print ISSN 1932-7447
Electronic ISSN 1932-7455
Publisher American Chemical Society (ACS)
Peer Reviewed Peer Reviewed
Volume 125
Issue 47
Pages 26247-26255
Keywords Surfaces, Coatings and Films; Physical and Theoretical Chemistry; General Energy; Electronic, Optical and Magnetic Materials
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