High temperature pulsed-gate robustness testing of SiC power MOSFETs
(2015)
Journal Article
© 2015 Elsevier Ltd. Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applica... Read More about High temperature pulsed-gate robustness testing of SiC power MOSFETs.