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Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Conference Proceeding

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Fixed frequency finite-state model predictive control for indirect matrix converters with optimal switching pattern (2016)
Conference Proceeding

Finite States Model Predictive Control (MPC) has been recently applied to several converters topologies for the many advantages it can provide such as fast dynamics, multi-target control capabilities, easy implementation on digital control board and... Read More about Fixed frequency finite-state model predictive control for indirect matrix converters with optimal switching pattern.

Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs (2016)
Conference Proceeding

This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix C... Read More about Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs.