Detailed investigation of defect states in Erbium doped In2O3 thin films

Henini, M.; Ghosh, Anupam; Dwivedi, Shyam; Chakrabartty, Shubhro; Mondala, Aniruddha

Abstract

Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:Er TF based devices. The Au/In2O3:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In2O3/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In2O3:Er TFs from 10 K photoresponse. The Au/In2O3:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In2O3/Si devices. In addition, the Au/In2O3:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In2O3:Er/Si in the UV region as compared to Au/In2O3/Si.

Citation

Henini, M., Ghosh, A., Dwivedi, S., Chakrabartty, S., & Mondala, A. (2018). Detailed investigation of defect states in Erbium doped In2O3 thin films. Materials Research Bulletin, 99, https://doi.org/10.1016/j.materresbull.2017.11.020

• Journal Article Type: Article
• Acceptance Date: Nov 9, 2017
• Online Publication Date: Nov 11, 2017
• Publication Date: Mar 1, 2018
• Deposit Date: Nov 20, 2017
• Publicly Available Date: Nov 12, 2018
• Journal: Materials Research Bulletin
• Print ISSN: 0025-5408
• Electronic ISSN: 0025-5408
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 99
• DOI: https://doi.org/10.1016/j.materresbull.2017.11.020
• Keywords: A. Electronic materials; A. Oxides; B. Chemical synthesis; D. Defects; D. Electrical properties
• Public URL: https://nottingham-repository.worktribe.com/output/962409
• Publisher URL: http://www.sciencedirect.com/science/article/pii/S0025540817320561