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Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

Moro, Fabrizio; Bhuiyan, Mahabub A.; Kudrynskyi, Zakhar R.; Puttock, Robert; Kazakova, Olga; Makarovsky, Oleg; Fay, Michael; Parmenter, Christopher D.J.; Kovalyuk, Zakhar D.; Fielding, Alistair John; Kern, Michal; van Slageren, Joris; Patanè, Amalia

Authors

Fabrizio Moro

Mahabub A. Bhuiyan

Zakhar R. Kudrynskyi

Robert Puttock

Olga Kazakova

Oleg Makarovsky

Christopher D.J. Parmenter

Zakhar D. Kovalyuk

Alistair John Fielding

Michal Kern

Joris van Slageren

Amalia Patanè



Abstract

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Journal Article Type Article
Publication Date Jul 1, 2018
Journal Advanced Science
Electronic ISSN 2198-3844
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 5
Issue 7
Article Number 1800257
APA6 Citation Moro, F., Bhuiyan, M. A., Kudrynskyi, Z. R., Puttock, R., Kazakova, O., Makarovsky, O., …Patanè, A. (2018). Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5(7), doi:10.1002/advs.201800257. ISSN 2198-3844
DOI https://doi.org/10.1002/advs.201800257
Keywords van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
Publisher URL https://onlinelibrary.wiley.com/doi/abs/10.1002/advs.201800257
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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