Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

Abstract

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Citation

Moro, F., Bhuiyan, M. A., Kudrynskyi, Z. R., Puttock, R., Kazakova, O., Makarovsky, O., …Patanè, A. (2018). Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5(7), Article 1800257. https://doi.org/10.1002/advs.201800257

• Journal Article Type: Article
• Acceptance Date: Mar 13, 2018
• Online Publication Date: May 11, 2018
• Publication Date: Jul 1, 2018
• Deposit Date: Apr 27, 2018
• Publicly Available Date: May 11, 2018
• Journal: Advanced Science
• Electronic ISSN: 2198-3844
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 5
• Issue: 7
• Article Number: 1800257
• DOI: https://doi.org/10.1002/advs.201800257
• Keywords: van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
• Public URL: https://nottingham-repository.worktribe.com/output/932083
• Publisher URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/advs.201800257