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Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

Moro, Fabrizio; Bhuiyan, Mahabub A.; Kudrynskyi, Zakhar R.; Puttock, Robert; Kazakova, Olga; Makarovsky, Oleg; Fay, Michael; Parmenter, Christopher D.J.; Kovalyuk, Zakhar D.; Fielding, Alistair John; Kern, Michal; van Slageren, Joris; Patanè, Amalia

Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal Thumbnail


Authors

Fabrizio Moro

Mahabub A. Bhuiyan

ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne Mclaren Fellows

Robert Puttock

Olga Kazakova

Zakhar D. Kovalyuk

Alistair John Fielding

Michal Kern

Joris van Slageren



Abstract

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Citation

Moro, F., Bhuiyan, M. A., Kudrynskyi, Z. R., Puttock, R., Kazakova, O., Makarovsky, O., …Patanè, A. (2018). Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5(7), Article 1800257. https://doi.org/10.1002/advs.201800257

Journal Article Type Article
Acceptance Date Mar 13, 2018
Online Publication Date May 11, 2018
Publication Date Jul 1, 2018
Deposit Date Apr 27, 2018
Publicly Available Date May 11, 2018
Journal Advanced Science
Electronic ISSN 2198-3844
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 5
Issue 7
Article Number 1800257
DOI https://doi.org/10.1002/advs.201800257
Keywords van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
Public URL https://nottingham-repository.worktribe.com/output/932083
Publisher URL https://onlinelibrary.wiley.com/doi/abs/10.1002/advs.201800257

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