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Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi

Vaisakh, C.P.; Foxon, C.T.; Novikov, Sergei V.; Kini, R.N.


C.P. Vaisakh

C.T. Foxon

R.N. Kini


We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown at higher gallium beam equivalent pressure (BEP). The optical conductivity spectra in these pseudo-amorphous epilayers follow a Drude–Smith behaviour due to charge confinement effects. The direct current conductivity in the epilayers grown at the highest Ga BEP (3.1 × 10−7 Torr) show an increase of three orders of magnitude compared to the one grown at the lowest Ga BEP (2.0 × 10−7 Torr). Our measurements suggests a percolative transition from an insulating nature in the GaNBi epilayers grown at low Ga BEP to a highly conducting phase in the epilayers grown at high Ga BEP.


Vaisakh, C., Foxon, C., Novikov, S. V., & Kini, R. (2017). Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi. Semiconductor Science and Technology, 32(12), Article 125009.

Journal Article Type Article
Acceptance Date Oct 11, 2017
Publication Date Oct 31, 2017
Deposit Date Nov 7, 2017
Publicly Available Date Nov 1, 2018
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Electronic ISSN 1361-6641
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 32
Issue 12
Article Number 125009
Keywords Dilute bismides; Terahertz spectroscopy; Percolation conductivity
Public URL
Publisher URL
Additional Information This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at


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