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Pressure contact multi-chip packaging of SiC Schottky diodes

Gonzalez, Jose Ortiz; Alatise, Olayiwola; Mawby, Philip; Aliyu, Attahir Murtala; Castellazzi, Alberto

Authors

Jose Ortiz Gonzalez

Olayiwola Alatise

Philip Mawby

Attahir Murtala Aliyu

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk



Abstract

Pressure contact packages have demonstrated an improved reliability for silicon devices due to the elimination of the weak elements of the packaging, namely wirebonds and solder. This packaging approach has not yet been widely studied for SiC devices, however, it is of high interest for applications like HVDC or rail traction, where the wide bandgap properties of SiC devices can be fully exploited and high reliability is critical. Current IGBT press-pack modules use Si PiN diodes for enabling reverse conduction, however, the use of SiC Schottky diodes would be beneficial given their better characteristics including low switching losses and lower zero temperature coefficient (ZTC) for electrothermal stability of diodes in parallel. A prototype for the evaluation of SiC Schottky diodes using pressure contacts has been designed, built and tested for both single die and multiple die.

Citation

Gonzalez, J. O., Alatise, O., Mawby, P., Aliyu, A. M., & Castellazzi, A. (in press). Pressure contact multi-chip packaging of SiC Schottky diodes

Conference Name 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017)
End Date Jun 1, 2017
Acceptance Date Mar 29, 2017
Online Publication Date Jul 24, 2017
Deposit Date Oct 9, 2017
Publicly Available Date Oct 9, 2017
Peer Reviewed Peer Reviewed
Keywords Pressure contacts, Press-pack, Silicon
Public URL http://eprints.nottingham.ac.uk/id/eprint/47025
Publisher URL http://ieeexplore.ieee.org/document/7988977/
Related Public URLs http://www.ispsd2017.com/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Published in: Proceedings of 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017), 28 May-1 June 2017, Sapporo, Japan, Institute of Electrical Engineers of Japan, 2017, pp. 435-438. ISSN: 1946-0201. ISBN 9784886860958. doi:10.23919/ISPSD.2017.7988977

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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