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Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes

Henini, M.



The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n) and series resistance (RS) for each diode were evaluated using both thermionic emission (TE) theory and Cheung's method. Our experimental results showed that the sample with a moderate doping concentration of 3×1016 cm-3 has the best performance, including ideality factor of 1.25 and rectification ratio of 2.24×103 at room temperature. All samples showed an abnormal behavior of reducing ΦB and increasing n with increase of temperature. This behavior was attributed, in case of low concertation samples, to barrier inhomogeneity and was explained by assuming a Gaussian distribution of barrier heights at the interface. While for the heavily doped sample, such non-ideal manner was ascribed with tunneling through the field emission (FE) mechanism.


Henini, M. (in press). Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes. Modern Electronic Materials, 3(2),

Journal Article Type Article
Acceptance Date Jun 26, 2017
Online Publication Date Jun 28, 2017
Deposit Date Nov 20, 2017
Publicly Available Date Nov 20, 2017
Journal Modern Electronic Materials
Electronic ISSN 2452-1779
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 3
Issue 2
Keywords Schottky barrier height; Doping concentration effect; Current–voltage characteristics; Cheung's equation; Gaussian distribution of barrier heights
Public URL
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