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Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots

Makarovsky, Oleg; Turyanska, Lyudmila; Mori, N.; Greenaway, Mark; Eaves, Laurence; Patanè, Amalia; Fromhold, Mark; Lara-Avila, Samuel; Kubatkin, Sergey; Yakimova, Rositsa

Authors

Oleg Makarovsky

Lyudmila Turyanska

N. Mori

Mark Greenaway

Laurence Eaves

Amalia Patanè

Mark Fromhold

Samuel Lara-Avila

Sergey Kubatkin

Rositsa Yakimova



Abstract

We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm-2 and 400 meV, respectively.

Journal Article Type Article
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 4
Issue 3
APA6 Citation Makarovsky, O., Turyanska, L., Mori, N., Greenaway, M., Eaves, L., Patanè, A., …Yakimova, R. (in press). Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4(3), https://doi.org/10.1088/2053-1583/aa76bb
DOI https://doi.org/10.1088/2053-1583/aa76bb
Keywords SiC-graphene, Unipolar charge correlation, Colloidal quantum dots, Monte Carlo simulations
Publisher URL http://iopscience.iop.org/article/10.1088/2053-1583/aa76bb/meta
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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