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Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

Gordo, V. Orsi; Gobato, Y.G.; Galeti, H.V.A.; Brasil, M.J.S.P.; Taylor, David; Henini, M.

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices Thumbnail


Authors

V. Orsi Gordo

Y.G. Gobato

H.V.A. Galeti

M.J.S.P. Brasil

David Taylor



Abstract

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.

Citation

Gordo, V. O., Gobato, Y., Galeti, H., Brasil, M., Taylor, D., & Henini, M. (in press). Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices. Journal of Electronic Materials, 46(7), https://doi.org/10.1007/s11664-017-5391-2

Journal Article Type Article
Acceptance Date Feb 18, 2017
Online Publication Date Mar 2, 2017
Deposit Date Mar 31, 2017
Publicly Available Date Mar 31, 2017
Journal Journal of Electronic Materials
Print ISSN 0361-5235
Electronic ISSN 1543-186X
Publisher Springer Verlag
Peer Reviewed Peer Reviewed
Volume 46
Issue 7
DOI https://doi.org/10.1007/s11664-017-5391-2
Keywords Quantum rings, photoluminescence, spin polarization, resonant tunneling
Public URL https://nottingham-repository.worktribe.com/output/848477
Publisher URL https://link.springer.com/article/10.1007%2Fs11664-017-5391-2
Additional Information (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Contract Date Mar 31, 2017

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