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3.3 kV SiC JBS diode configurable rectifier module

Mouawad, Bassem; Wang, Zhenyu; Buettner, J.; Castellazzi, Alberto

Authors

Bassem Mouawad ezzbm1@exmail.nottingham.ac.uk

Zhenyu Wang

J. Buettner

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk



Abstract

This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge. The devices are of merged Junction-Barrier-Schottky (JBS) type to enable for optimum performance even in the presence of current surges, as demanded by the application. To contain the cost of the proposed solution, their packaging relies on Insulated Metal Substrates (IMS), as opposed to conventional ceramic type substrates. The layout and module pin terminations are chosen to yield optimum electro-thermal and electro-magnetic performance in compatibility with a standard solder and wire-bond assembly process. Preliminary functional static characterization tests at different temper¬atures are also presented.

Start Date Sep 11, 2017
Publication Date Sep 14, 2017
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
APA6 Citation Mouawad, B., Wang, Z., Buettner, J., & Castellazzi, A. (2017). 3.3 kV SiC JBS diode configurable rectifier module. doi:10.23919/EPE17ECCEEurope.2017.8099353
DOI https://doi.org/10.23919/EPE17ECCEEurope.2017.8099353
Keywords Wide bandgap devices, Silicon Carbide (SiC), Packaging, Diode, High voltage power converters, Wind energy
Publisher URL https://ieeexplore.ieee.org/document/8099353/
Related Public URLs http://www.epe2017.com/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information

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3.3 kV SiC JBS Diode Configurable Rectifier Module.pdf (2.1 Mb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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