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SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation

Li, Ke; Evans, Paul; Johnson, Christopher Mark

Authors

Ke Li Ke.Li@nottingham.ac.uk

Paul Evans paul.evans@nottingham.ac.uk

Christopher Mark Johnson mark.johnson@nottingham.ac.uk



Abstract

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. Then static and dynamic characteristics of commercial SiC and GaN power transistors are compared and it is shown that GaN-HEMT would still have smaller ON-state resistance and inter-electrode capacitance in comparison with a 600V SiC device. After that, switching losses E8w of a GaN-HEMT is measured and compared with that of a 1200V SiC-JFET and a 600V SiC-MOSFET, in which it is shown that E8w of a GaN-HEMT is smaller than a SiC power transistor with the same power rating.

Publication Date Oct 19, 2016
Peer Reviewed Peer Reviewed
APA6 Citation Li, K., Evans, P., & Johnson, C. M. (2016). SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
Keywords Wide bandgap power semiconductor device; GaN-HEMT; SiC-JFET; SiC-MOSFET; Conduction loss; Switching loss
Publisher URL http://ieeexplore.ieee.org/document/7791774/
Related Public URLs http://www.vppc2016.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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