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Body diode reliability investigation of SiC power MOSFETs

Fayyaz, A.; Romano, G.; Castellazzi, Alberto

Authors

A. Fayyaz

G. Romano

Alberto Castellazzi



Abstract

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC) power MOSFET device manufacturing technology has resulted in their wider commercial availability with different voltage and current ratings and from various manufacturers. Hence, it is essential to perform characterisation of its intrinsic body diode. This paper presents the reliability assessment of body diodes of latest generation discrete SiC power MOSFETs within a 3-phase 2-level DC-to-AC inverter representing realistic operating conditions for power electronic applications.

Journal Article Type Article
Publication Date 2016-09
Journal Microelectronics Reliability
Print ISSN 0026-2714
Electronic ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 64
Pages 530-534
APA6 Citation Fayyaz, A., Romano, G., & Castellazzi, A. (2016). Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64, 530-534. https://doi.org/10.1016/j.microrel.2016.07.044
DOI https://doi.org/10.1016/j.microrel.2016.07.044
Keywords Silicon carbide; Wide bandgap; Power MOSFET; Body diode;
Reliability
Publisher URL http://www.sciencedirect.com/science/article/pii/S0026271416301883
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0





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