Body diode reliability investigation of SiC power MOSFETs

Fayyaz, A.; Romano, G.; Castellazzi, Alberto

Abstract

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC) power MOSFET device manufacturing technology has resulted in their wider commercial availability with different voltage and current ratings and from various manufacturers. Hence, it is essential to perform characterisation of its intrinsic body diode. This paper presents the reliability assessment of body diodes of latest generation discrete SiC power MOSFETs within a 3-phase 2-level DC-to-AC inverter representing realistic operating conditions for power electronic applications.

Citation

Fayyaz, A., Romano, G., & Castellazzi, A. (2016). Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64, 530-534. https://doi.org/10.1016/j.microrel.2016.07.044

• Journal Article Type: Article
• Acceptance Date: Jul 7, 2016
• Online Publication Date: Sep 18, 2016
• Publication Date: 2016-09
• Deposit Date: Nov 11, 2016
• Publicly Available Date: Nov 11, 2016
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Electronic ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 64
• Pages: 530-534
• DOI: https://doi.org/10.1016/j.microrel.2016.07.044
• Keywords: Silicon carbide; Wide bandgap; Power MOSFET; Body diode; ; Reliability
• Public URL: https://nottingham-repository.worktribe.com/output/808451
• Publisher URL: http://www.sciencedirect.com/science/article/pii/S0026271416301883
• Contract Date: Nov 11, 2016