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Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes

Teffahi, A.; Hamri, D.; Mostefa, A.; Saidane, A.; Al Saqri, N.; Felix, J.F.; Henini, M.

Authors

A. Teffahi

D. Hamri

A. Mostefa

A. Saidane

N. Al Saqri

J.F. Felix

M. Henini mohamed.henini@nottingham.ac.uk



Abstract

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs1−xNx Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current.

At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal.

Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

Journal Article Type Article
Journal Current Applied Physics
Print ISSN 1567-1739
Electronic ISSN 1878-1675
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 16
Issue 8
APA6 Citation Teffahi, A., Hamri, D., Mostefa, A., Saidane, A., Al Saqri, N., Felix, J., & Henini, M. (in press). Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16(8), https://doi.org/10.1016/j.cap.2016.05.003
DOI https://doi.org/10.1016/j.cap.2016.05.003
Keywords γ-ray irradiation; Schottky diode; Ideality factor; I–V; C–V-f; G/ω-V-f measurements
Publisher URL http://www.sciencedirect.com/science/article/pii/S156717391630116X
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0





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