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Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

Vdovin, Evgeny E.; Mishchenko, A.; Greenaway, M.T.; Zhu, M.J.; Ghazaryan, D.; Misra, A.; Cao, Y.; Morozov, S.V.; Makarovsky, Oleg; Fromhold, T.M.; Patan�, Amalia; Slotman, G.J.; Katsnelson, M. I; Geim, A.K.; Nososelov, K.S.; Eaves, Laurence

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors Thumbnail


Evgeny E. Vdovin

A. Mishchenko

M.T. Greenaway

M.J. Zhu

D. Ghazaryan

A. Misra

Y. Cao

S.V. Morozov

G.J. Slotman

M. I Katsnelson

A.K. Geim

K.S. Nososelov


We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Journal Article Type Article
Acceptance Date Mar 23, 2016
Online Publication Date May 5, 2016
Publication Date May 5, 2016
Deposit Date Apr 22, 2016
Publicly Available Date Aug 7, 2018
Journal Physical Review Letters
Print ISSN 0031-9007
Electronic ISSN 1079-7114
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 116
Issue 18
Article Number 186603
Public URL
Publisher URL


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