The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

Gunes, M.; Donmez, O.; Gumus, C.; Erol, A.; Alghamdi, H.; Alhassan, S.; Alhassni, A.; Alotaibi, S.; Schmidbauer, M.; Galeti, H.V.A.; Henini, M.

Abstract

The band line-up and band offset calculations of GaAs0.978Bi0.022/GaAs single quantum well with spatial changes of Bi composition were reported. The spatial Bi profile and a certain amount of the Bi composition in the barrier layer were determined by HR-XRD measurements. Virtual Crystal Approximation and Valence Band Anti-Crossing models were used including strain effects to obtain conduction and valence band edge shifts with Bi incorporation. Photoluminescence (PL) measurements were performed at a low temperature of 8 K as a function of excitation intensity. The PL spectra have shown asymmetric line shapes, which were fitted with different Gaussian functions. Comparing experimental PL results with calculated band edge energies, it was found that optical transition is a type I under low intensity excitation while the optical transition is switched from type I to type II due to the spatial changes in Bi concentrations. The band offsetsΔEc/ΔEv were also determined.

Citation

Gunes, M., Donmez, O., Gumus, C., Erol, A., Alghamdi, H., Alhassan, S., …Henini, M. (2021). The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure. Physica B: Condensed Matter, 602, Article 412487. https://doi.org/10.1016/j.physb.2020.412487

• Journal Article Type: Article
• Acceptance Date: Aug 22, 2020
• Online Publication Date: Nov 26, 2020
• Publication Date: Feb 1, 2021
• Deposit Date: Dec 17, 2020
• Publicly Available Date: Nov 27, 2021
• Journal: Physica B: Condensed Matter
• Print ISSN: 0921-4526
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 602
• Article Number: 412487
• DOI: https://doi.org/10.1016/j.physb.2020.412487
• Keywords: Bismide quantum well, Valence band anticrossing model, Band offset, Indirect transition
• Public URL: https://nottingham-repository.worktribe.com/output/5154091
• Publisher URL: https://www.sciencedirect.com/science/article/abs/pii/S0921452620304877
• Additional Information: This article is maintained by: Elsevier; Article Title: The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure; Journal Title: Physica B: Condensed Matter; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.physb.2020.412487; Content Type: article; Copyright: © 2020 Elsevier B.V. All rights reserved.