Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

Garoudja, Elyes; Filali, Walid; Oussalah, Slimane; Sengouga, Noureddine; Henini, Mohamed

Abstract

In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.

Citation

Garoudja, E., Filali, W., Oussalah, S., Sengouga, N., & Henini, M. (2020). Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters. Journal of Semiconductors, 41(10), Article 102401. https://doi.org/10.1088/1674-4926/41/10/102401

• Journal Article Type: Article
• Acceptance Date: Apr 7, 2020
• Online Publication Date: Oct 1, 2020
• Publication Date: Oct 1, 2020
• Deposit Date: Oct 6, 2020
• Publicly Available Date: Oct 2, 2021
• Journal: Journal of Semiconductors
• Print ISSN: 1674-4926
• Electronic ISSN: 2058-6140
• Peer Reviewed: Peer Reviewed
• Volume: 41
• Issue: 10
• Article Number: 102401
• DOI: https://doi.org/10.1088/1674-4926/41/10/102401
• Public URL: https://nottingham-repository.worktribe.com/output/4942216
• Publisher URL: http://www.jos.ac.cn/article/id/49cc7f99-228b-4894-8557-53a7401abf4c?viewType=HTML
• Additional Information: Article Title: Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters; Journal Title: Journal of Semiconductors; Article Type: paper; Copyright Information: © 2020 Chinese Institute of Electronics; Date Received: 2019-11-28; Date Accepted: ; Online publication date: