Debarati Mazumder
Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars
Mazumder, Debarati; Xie, Jiahao; Kudrynskyi, Zakhar R; Wang, Xinjiang; Makarovsky, Oleg; Bhuiyan, Mahabub A; Kim, Hyunseok; Chang, Ting?Yuan; Huffaker, Diana L.; Kovalyuk, Zakhar D; Zhang, Lijun; Patan�, Amalia
Authors
Jiahao Xie
Dr ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne McLaren Fellows
Xinjiang Wang
Dr OLEG MAKAROVSKIY Oleg.Makarovsky@nottingham.ac.uk
ASSOCIATE PROFESSOR
Mahabub A Bhuiyan
Hyunseok Kim
Ting?Yuan Chang
Diana L. Huffaker
Zakhar D Kovalyuk
Lijun Zhang
Professor Amalia Patane AMALIA.PATANE@NOTTINGHAM.AC.UK
PROFESSOR OF PHYSICS
Abstract
Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical properties, and compatibility with different platforms for electronics and optoelectronics. Here, we investigate and exploit the inherent optical anisotropy and mechanical flexibility of atomically thin semiconducting layers to induce a controlled enhancement of optical signals. This enhancement is achieved by straining and bending layers of the van der Waals crystal indium selenide (InSe) onto a periodic array of Si-pillars. This enhancement has strong dependence on the layer thickness and is modelled by first-principles electronic band structure theory, revealing the role of the symmetry of the atomic orbitals and light polarization dipole selection rules on the optical properties of the bent layers. The effects described in this paper are qualitatively different from those reported in other materials, such as transition metal dichalcogenides, and do not arise from a photonic cavity effect, as demonstrated before for other semiconductors. Our findings on InSe offer a route to flexible nano-photonics compatible with silicon electronics by exploiting the flexibility and anisotropic and wide spectral optical response of a two-dimensional layered material.
Citation
Mazumder, D., Xie, J., Kudrynskyi, Z. R., Wang, X., Makarovsky, O., Bhuiyan, M. A., Kim, H., Chang, T., Huffaker, D. L., Kovalyuk, Z. D., Zhang, L., & Patanè, A. (2020). Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars. Advanced Optical Materials, 8(18), Article 2000828. https://doi.org/10.1002/adom.202000828
Journal Article Type | Article |
---|---|
Acceptance Date | May 27, 2020 |
Online Publication Date | Jun 15, 2020 |
Publication Date | Jun 15, 2020 |
Deposit Date | May 28, 2020 |
Publicly Available Date | Jun 16, 2021 |
Journal | Advanced Optical Materials |
Electronic ISSN | 2195-1071 |
Publisher | Wiley |
Peer Reviewed | Peer Reviewed |
Volume | 8 |
Issue | 18 |
Article Number | 2000828 |
DOI | https://doi.org/10.1002/adom.202000828 |
Keywords | InSe, 2D excitons, enhanced luminescence, Si pillars |
Public URL | https://nottingham-repository.worktribe.com/output/4524342 |
Publisher URL | https://onlinelibrary.wiley.com/doi/full/10.1002/adom.202000828 |
Additional Information | Received: 2020-05-20; Published: 2020-06-15 |
Files
AdvOptMat 27May2020
(2.4 Mb)
PDF
Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
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