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New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties

Sun, Yuanhui; Li, Yawen; Li, Tianshu; Biswas, Koushik; Patanè, Amalia; Zhang, Lijun

Authors

Yuanhui Sun

Yawen Li

Tianshu Li

Koushik Biswas

Amalia Patanè

Lijun Zhang



Abstract

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, we report on the discovery of new polymorphs of InSe with enhanced electronic properties. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, we identify polymorphs that consist of a centrosymmetric monolayer belonging to the point group

Journal Article Type Article
Publication Date Jun 9, 2020
Journal Advanced Functional Materials
Print ISSN 1616-301X
Electronic ISSN 1616-3028
Publisher Wiley
Peer Reviewed Peer Reviewed
APA6 Citation Sun, Y., Li, Y., Li, T., Biswas, K., Patanè, A., & Zhang, L. (2020). New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties. Advanced Functional Materials, https://doi.org/10.1002/adfm.202001920
DOI https://doi.org/10.1002/adfm.202001920
Publisher URL https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.202001920
Additional Information This is the peer reviewed version of the following article: Sun, Y., Li, Y., Li, T., Biswas, K., Patanè, A., Zhang, L., New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties. Adv. Funct. Mater. 2020, 2001920., which has been published in final form at https://doi.org/10.1002/adfm.202001920. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
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