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High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

Mudd, Garry W.; Svatek, Simon A.; Hague, Lee; Makarovsky, Oleg; Kudrynskyi, Zakhar R.; Mellor, Christopher J.; Beton, Peter H.; Eaves, Laurence; Novoselov, Kostya S.; Kovalyuk, Zakhar D.; Vdovin, Evgeny E.; Marsden, Alex J.; Wilson, Neil R.; Patanè, Amalia


Garry W. Mudd

Simon A. Svatek

Lee Hague

Zakhar R. Kudrynskyi

Kostya S. Novoselov

Zakhar D. Kovalyuk

Evgeny E. Vdovin

Alex J. Marsden

Neil R. Wilson


We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a high photoresponsivity, which exceeds that for other two-dimensional van der Waals crystals, and a spectral response that extends from the near-infrared to the visible spectrum. The highest photoresponsivity is achieved in device architectures where the InSe and graphene layers are vertically stacked, thus enabling effective extraction of photogenerated carriers from the InSe to the graphene electrodes.

Journal Article Type Article
Publication Date 2015-07
Journal Advanced Materials
Print ISSN 0935-9648
Electronic ISSN 0935-9648
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 27
Issue 25
Pages 3760-3766
APA6 Citation Mudd, G. W., Svatek, S. A., Hague, L., Makarovsky, O., Kudrynskyi, Z. R., Mellor, C. J., …Patanè, A. (2015). High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures. Advanced Materials, 27(25), 3760-3766.
Keywords InSe, Graphene, Photoresponsivity
Publisher URL
Copyright Statement Copyright information regarding this work can be found at the following address:


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