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High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'ko, V.I.; Geim, Andre K.; Cao, Yang

Authors

Denis A. Bandurin

Anastasia V. Tyurnina

Geliang L. Yu

Artem Mishchenko

Viktor Zólyomi

Sergey V. Morozov

Roshan Krishna Kumar

Roman V. Gorbachev

Zakhar R. Kudrynskyi

Sergio Pezzini

Zakhar D. Kovalyuk

Uli Zeitler

Konstantin S. Novoselov

Amalia Patanè

Laurence Eaves

Irina V. Grigorieva

V.I. Fal'ko

Andre K. Geim

Yang Cao



Abstract

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 10₃ cm₂ V−¹ s−¹ and 10⁴cm₂ V−¹ s−¹ at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer’s mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Journal Article Type Article
Journal Nature Nanotechnology
Print ISSN 1748-3387
Electronic ISSN 1748-3395
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
APA6 Citation Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., …Cao, Y. (in press). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, doi:10.1038/nnano.2016.242
DOI https://doi.org/10.1038/nnano.2016.242
Publisher URL http://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2016.242.html
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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