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High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'Ko, Vladimir I.; Geim, Andre K.; Cao, Yang

Authors

Denis A. Bandurin

Anastasia V. Tyurnina

Geliang L. Yu

Artem Mishchenko

Viktor Zólyomi

Sergey V. Morozov

Roshan Krishna Kumar

Roman V. Gorbachev

Zakhar R. Kudrynskyi

Sergio Pezzini

Zakhar D. Kovalyuk

Uli Zeitler

Konstantin S. Novoselov

Irina V. Grigorieva

Vladimir I. Fal'Ko

Andre K. Geim

Yang Cao



Abstract

© 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved. A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V-1 s-1 and 104 cm2 V-1 s-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Citation

Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., …Cao, Y. (2017). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, 12(3), 223-227. https://doi.org/10.1038/nnano.2016.242

Journal Article Type Article
Acceptance Date Oct 10, 2016
Online Publication Date Nov 21, 2016
Publication Date Mar 7, 2017
Deposit Date Nov 22, 2016
Publicly Available Date Nov 22, 2016
Journal Nature Nanotechnology
Print ISSN 1748-3387
Electronic ISSN 1748-3395
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 12
Issue 3
Pages 223-227
DOI https://doi.org/10.1038/nnano.2016.242
Keywords Electrical and Electronic Engineering; General Materials Science; Atomic and Molecular Physics, and Optics; Bioengineering; Condensed Matter Physics; Biomedical Engineering
Public URL http://eprints.nottingham.ac.uk/id/eprint/38877
Publisher URL https://www.nature.com/articles/nnano.2016.242
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
Additional Information Received: 26 June 2016; Accepted: 10 October 2016; First Online: 21 November 2016; : The authors declare no competing financial interests.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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