@article { , title = {New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties}, abstract = {The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, we report on the discovery of new polymorphs of InSe with enhanced electronic properties. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, we identify polymorphs that consist of a centrosymmetric monolayer belonging to the point group }, doi = {10.1002/adfm.202001920}, eissn = {1616-3028}, issn = {1616-301X}, issue = {31}, journal = {Advanced Functional Materials}, publicationstatus = {Published}, publisher = {Wiley}, url = {https://nottingham-repository.worktribe.com/output/4353384}, volume = {30}, year = {2020}, author = {Sun, Yuanhui and Li, Yawen and Li, Tianshu and Biswas, Koushik and Patanč, Amalia and Zhang, Lijun} }