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Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors


Nathan D. Cottam

Chengxi Zhang

Evgenii E. Vdovin


Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wavelength range of photodetectors based on traditional materials. Here we demonstrate a defect-assisted high photoconductive gain in graphene transistors decorated with all-inorganic caesium lead halide perovskite NCs. The photoconductive gain in the UV-VIS wavelength range arises from the charge transfer between the NCs and graphene and enables observation of high photoconductive gain of 106 A/W. This is accompanied by a giant hysteresis of the graphene resistance that is strongly dependent on electrostatic gating and temperature. Our data are well described by a phenomenological macroscopic model of the charge transfer from bound states in the NCs into the graphene layer, providing a useful tool for the design of high-photoresponsivity perovskite/graphene transistors.


Cottam, N. D., Zhang, C., Turyanska, L., Eaves, L., Kudrynskyi, Z., Vdovin, E. E., …Makarovsky, O. (2020). Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors. ACS Applied Electronic Materials, 2, 147-154.

Journal Article Type Article
Acceptance Date Dec 10, 2019
Online Publication Date Dec 10, 2019
Publication Date Jan 28, 2020
Deposit Date Dec 19, 2019
Publicly Available Date Dec 19, 2019
Journal ACS Applied Electronic Materials
Electronic ISSN 2637-6113
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 2
Pages 147-154
Public URL
Publisher URL


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