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Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Balakrishnan, N.; Pettinari, G.; Makarovsky, O.; Turyanska, L.; Fay, M. W.; De Luca, M.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Patan�, A.

Authors

N. Balakrishnan

G. Pettinari

O. Makarovsky

M. De Luca

A. Polimeni

M. Capizzi

F. Martelli

S. Rubini



Abstract

We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable. © 2012 American Physical Society.

Citation

Balakrishnan, N., Pettinari, G., Makarovsky, O., Turyanska, L., Fay, M. W., De Luca, M., …Patanè, A. (2012). Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical review B: Condensed matter and materials physics, 86(15), Article 155307. https://doi.org/10.1103/PhysRevB.86.155307

Journal Article Type Article
Online Publication Date Oct 10, 2012
Publication Date Oct 15, 2012
Deposit Date Feb 21, 2020
Journal Physical Review B - Condensed Matter and Materials Physics
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 86
Issue 15
Article Number 155307
DOI https://doi.org/10.1103/PhysRevB.86.155307
Public URL https://nottingham-repository.worktribe.com/output/3159521
Publisher URL https://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.155307