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Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Balakrishnan, N.; Pettinari, G.; Makarovsky, O.; Turyanska, L.; Fay, M. W.; De Luca, M.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Patanè, A.


N. Balakrishnan

G. Pettinari

O. Makarovsky

L. Turyanska

M. De Luca

A. Polimeni

M. Capizzi

F. Martelli

S. Rubini

A. Patanè


We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable. © 2012 American Physical Society.

Journal Article Type Article
Publication Date Oct 15, 2012
Journal Physical Review B - Condensed Matter and Materials Physics
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 86
Issue 15
Article Number 155307
APA6 Citation Balakrishnan, N., Pettinari, G., Makarovsky, O., Turyanska, L., Fay, M. W., De Luca, M., …Patanè, A. (2012). Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical review B: Condensed matter and materials physics, 86(15),
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